Kim, T. J. Hwang, S. Y. Byun, J. S. Aspnes, D. E. Lee, E. H. Song, J. D. Liang, C. -T. Chang, Y. -C. Park, H. G. Choi, J. Kim, J. Y. Kang, Y. R. Park, J. C. Kim, Y. D. 2024-01-20T09:02:33Z 2024-01-20T09:02:33Z 2021-09-02 2014-09 1567-1739 https://pubs.kist.re.kr/handle/201004/126418 We report pseudodielectric functions <epsilon> from 1.5 to 6.0 eV of InxAl1 (-) P-x ternary alloy films. Data were obtained by spectroscopic ellipsometry on 1.2 mu m thick films grown on (001) GaAs substrates by molecular beam epitaxy. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations using the linear augmented Slater-type orbital method. (C) 2014 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV OPTICAL-PROPERTIES PARAMETERS Dielectric functions and interband transitions of InxAl1 (-) P-x alloys Article 10.1016/j.cap.2014.06.026 1 CURRENT APPLIED PHYSICS, v.14, no.9, pp.1273 - 1276 CURRENT APPLIED PHYSICS 14 9 1273 1276 scie scopus kci ART001911030 000340557200017 2-s2.0-84904632701 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article OPTICAL-PROPERTIES PARAMETERS Ellipsometry InAlP Dielectric function Critical point