Yang, Yun-Suk Um, Doo-Seung Lee, Youngsu Shin, JaeKyun Chang, Joonyeon Koo, Hyun Cheol Ko, Hyunhyub Kim, Hyung-jun 2024-01-20T09:02:59Z 2024-01-20T09:02:59Z 2021-09-02 2014-09 1882-0778 https://pubs.kist.re.kr/handle/201004/126440 We investigate the electrical spin injection and detection in In0.53Ga0.47As nanomembranes, which are originally. grown on InP substrates and subsequently heterogeneously integrated on SiO2/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In0.53Ga0.47As nanomembrane channels on SiO2/Si substrates, we successfully observe the electrical detection of spin injection from Ni81Fe19 ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300 K without mixing with anisotropic magnetoresistance, which is evidently verified by observing a memory effect. (C) 2014 The Japan Society of Applied Physics English IOP PUBLISHING LTD QUANTUM-WELLS SEMICONDUCTOR SILICON ACCUMULATION TRANSISTORS PRECESSION TRANSPORT LAYERS Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates Article 10.7567/APEX.7.093004 1 APPLIED PHYSICS EXPRESS, v.7, no.9 APPLIED PHYSICS EXPRESS 7 9 scie scopus 000342863500020 2-s2.0-84907022302 Physics, Applied Physics Article QUANTUM-WELLS SEMICONDUCTOR SILICON ACCUMULATION TRANSISTORS PRECESSION TRANSPORT LAYERS spin injection(detection) InGaAs channel epitaxial transfer Si substrate