Kim, Haeri Moon, Seon Young Kim, Shin-Ik Baek, Seung-Hyub Jang, Ho Won Kim, Dong-Wook 2024-01-20T09:03:08Z 2024-01-20T09:03:08Z 2021-09-02 2014-08-27 1944-8244 https://pubs.kist.re.kr/handle/201004/126447 We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments: H2(2%)/N2(98%), air, N-2, and O-2. The decrease in W and R due to charge writing was much larger in air (Delta W = -0.45 eV and Delta R = -40 k Omega/S) than in O-2 (Delta W = -0.21 eV and Delta R = -19 k Omega/S). The reduced R could be maintained more than 100 h in H-2/N-2. Such distinct behaviors were quantitatively discussed, based on the proposed chargewriting mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas. English American Chemical Society OXIDE INTERFACES ELECTRON GASES HETEROSTRUCTURES SURFACE TRANSITION SUPERCONDUCTIVITY CONDUCTIVITY COEXISTENCE Influence of Gas Ambient on Charge Writing at the LaAlO3/SrTiO3 Heterointerface Article 10.1021/am503367f 1 ACS Applied Materials & Interfaces, v.6, no.16, pp.14037 - 14042 ACS Applied Materials & Interfaces 6 16 14037 14042 scie scopus 000341122000087 2-s2.0-84906821073 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article OXIDE INTERFACES ELECTRON GASES HETEROSTRUCTURES SURFACE TRANSITION SUPERCONDUCTIVITY CONDUCTIVITY COEXISTENCE LaAlO3/SrTiO3 carrier density ambient effect charge writing