Shin, Hyun Wook Shin, Jae Cheol Kim, Do Yang Choi, Won Jun Choe, Jeong-Woo 2024-01-20T09:04:26Z 2024-01-20T09:04:26Z 2021-09-05 2014-08 1533-4880 https://pubs.kist.re.kr/handle/201004/126515 We report the crystal growth of the InxGa1-xAs nanowires (NWs) on SiO2 substrate using metal organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have been used as a catalyst for the vapor-liquid-solid growth. Electron microscopy characterization is performed to investigate the structural properties of the InxGa1-xAs NW. The InxGa1-xAs NW grown under an optimal condition has a single-crystal wurtzite structure without any misfit dislocation or stacking fault. Strong room temperature photoluminescence peaks are observed from InxGa1-xAs NWs passivated by GaAs. Very low light reflectance is measured at the NW surface in the wavelength range from 250 to 1200 nm. The single crystal InxGa1-xAs NWs are applicable to the various electrical and optical devices. English AMER SCIENTIFIC PUBLISHERS Structural and Optical Properties of the InxGa1-xAs Nanowires Grown on SiO2 via Vapor-Liquid-Solid Method Article 10.1166/jnn.2014.8301 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.8, pp.6297 - 6300 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 14 8 6297 6300 scie scopus 000333579100131 2-s2.0-84906549404 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article InxGa1-xAs Nanowires Vapor-Liquid-Solid MOCVD