Choi, Hee Soo Choi, Eunmi Kim, Areum Yoon, Sung Pil Pyo, Sung Gyu 2024-01-20T09:04:48Z 2024-01-20T09:04:48Z 2021-09-05 2014-08 1862-6300 https://pubs.kist.re.kr/handle/201004/126534 We report a wet process deposition in order to identify a cost-effective processing scheme for CuIn1-xGaxSe2 (CIGS) layers on molybdenum/soda lime glass substrates from a Cu-In-Ga precursor solution. We employed a spin coater at various settings to evaluate the uniformity of the resulting CIGS solar cell layer. After the CIGS precursor film was deposited, we applied a selenization process. In the selenization process, we used a controlled temperature RTA system and compared it to a noncontrolled temperature system. We investigated the morphological properties for different selenization temperature treatments. We used Raman mapping to detect binary compounds and found the binary compound effect on the film. Raman mapping results show that the density of the binary compound in the CIGS layer increased with selenization temperature, and at 600 degrees C, the density of the binary compounds was highest. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-V C H VERLAG GMBH CU(IN,GA)SE-2 SOLAR-CELLS THIN-FILMS BACK CONTACTS SE VAPOR EFFICIENCY SELENIZATION FABRICATION SINGLE CU PRECURSORS Microstructrual evolution of all-wet-processed CIGS films using Raman spectroscopy Article 10.1002/pssa.201330644 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.8, pp.1877 - 1881 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 211 8 1877 1881 scie scopus 000340521000035 2-s2.0-84905987558 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article CU(IN,GA)SE-2 SOLAR-CELLS THIN-FILMS BACK CONTACTS SE VAPOR EFFICIENCY SELENIZATION FABRICATION SINGLE CU PRECURSORS Cu(In, Ga)Se-2 microstructure Raman spectroscopy wet processing