Kim, S. Y. Song, J. D. Han, I. K. Kim, T. W. 2024-01-20T09:05:06Z 2024-01-20T09:05:06Z 2021-09-05 2014-08 1533-4880 https://pubs.kist.re.kr/handle/201004/126550 In0.6Al0.4As/Al0.4Ga0.6As quantum dots (QDs) were grown on GaAs (001) substrates by using molecular beam epitaxy utilizing a modified Stranski-Krastanow method. Atomic force microscopy images showed that the size of the In0.6Al0.4As QDs increased with increasing growth temperature. Photoluminescence spectra at 300 K showed that the exciton peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole subband (E1-HH1) of the In0.6Al0.4As/Al0.4Ga0.6As QDs shifted to large energy side with increasing growth temperature resulting from an increase in the height of the In0.6Al0.4As QDs. While the (E1-HH1) peak position of the PL spectra shifted toward larger energy side with increasing up to an annealing temperature of 700 degrees C, it shifted toward lower energy above 700 degrees C. The structural and the optical properties of In0.6Al0.4As/Al0.4Ga0.6As QDs were affected by the growth and annealing temperatures. English AMER SCIENTIFIC PUBLISHERS EFFICIENCY LASERS Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In0.6Al0.4As/Al0.4Ga0.6As Quantum Dots Article 10.1166/jnn.2014.8322 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.8, pp.5881 - 5884 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 14 8 5881 5884 scie scopus 000333579100045 2-s2.0-84906567771 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article EFFICIENCY LASERS In0.6Al0.4As/Al0.4Ga0.6As Quantum Dot Growth Temperature Annealing Temperature Structural Property Optical Property