Oh, Do hyun Ahn, Joon Sung Cho, Woon-Jo Kim, Tae Whan 2024-01-20T09:31:25Z 2024-01-20T09:31:25Z 2022-01-25 2014-07 1567-1739 https://pubs.kist.re.kr/handle/201004/126608 Thin film transistors (TFTs) with indium zinc tin-oxide (IZTO) dual-channel layers were fabricated on heavily-doped p-type Si substrates by using a tilted dual-target radio-frequency magnetron sputtering system. The number of oxygen vacancies in the IZTO channel layer decreased with increasing oxygen partial pressure, resulting in a decrease in the conductivity. The threshold voltage (Vth) shifted toward positive gate-source voltage with increasing oxygen partial pressure for the growth of the IZTO layer because of a decrease in the carrier concentration. The Vth, the mobility, the on/off-current ratio, and the subthreshold swing of the dual-channel IZTO TFTs were 3.5 V, 7.1 cm(2)/V s, 13 V/decade, and 8.2 x 10(6), respectively, which was enhanced by utilizing dual-channel layers consisting of a top channel deposited at a high oxygen partial pressure and a bottom channel deposited at a low oxygen partial pressure. (C) 2014 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV Enhancement of the electrical characteristics of indium-zinctin-oxide thin-film transistors utilizing dual-channel layers Article 10.1016/j.cap.2014.04.008 1 CURRENT APPLIED PHYSICS, v.14, no.7, pp.932 - 935 CURRENT APPLIED PHYSICS 14 7 932 935 N scie scopus kci 000338403700005 2-s2.0-84901301868 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article TRANSPARENT ELECTRODES ROOM-TEMPERATURE ZNO FABRICATION RESISTANCE DIODE AG Indium-zinc tin-oxide thin-film transistor Dual-channel layer Threshold voltage Oxygen partial pressure