Shin, Changhwan Lee, Gwang-Geun Han, Dae-Hee Han, Seung-Pil Tokumitsu, Eisuke Ohmi, Shun-Ichiro Kim, Dong-Joo Ishiwara, Hiroshi Park, Minseo Kim, Seung-Hyun Lee, Wan-Gyu Hwang, Yun Jeong Park, Byung-Eun 2024-01-20T09:31:32Z 2024-01-20T09:31:32Z 2021-09-05 2014-07 1349-2543 https://pubs.kist.re.kr/handle/201004/126615 A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (V-TH) window of similar to 20V for the transistor on paper. An on/off current ratio of similar to 10(2) is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT). English IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG POLYMER MEMORY Experimental demonstration of a ferroelectric FET using paper substrate Article 10.1587/elex.11.20140447 1 IEICE ELECTRONICS EXPRESS, v.11, no.14 IEICE ELECTRONICS EXPRESS 11 14 scie scopus 000344924600004 2-s2.0-84905041411 Engineering, Electrical & Electronic Engineering Article POLYMER MEMORY ferroelectric transistor paper substrate P(VDF-TrFE) P3HT