Lee, Seung-Hwan Kim, Hong-Ki Kang, Min-Gyu Kang, Chong-Yun Lee, Sung-Gap Lee, Young-Hie Yoon, Jung-Rag 2024-01-20T09:31:41Z 2024-01-20T09:31:41Z 2021-09-05 2014-07 0741-3106 https://pubs.kist.re.kr/handle/201004/126623 A formed device embedded-type 0402 sized (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 degrees C-125 degrees C, delta C/C = +/- 30 ppm/degrees C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Omega and 62.39 mu H, respectively. The leakage current density was 0.78 mu A/cm(2) at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC DIELECTRIC-PROPERTIES FOWLER-NORDHEIM Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O-3 Thin Film Applied to Embedded Decoupling Capacitors Article 10.1109/LED.2014.2320295 1 IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.777 - 779 IEEE ELECTRON DEVICE LETTERS 35 7 777 779 scie scopus 000338662100030 2-s2.0-84903618460 Engineering, Electrical & Electronic Engineering Article DIELECTRIC-PROPERTIES FOWLER-NORDHEIM CSZT embedded capacitor FDE