Shin, Y. H. Kim, Yongmin Song, J. D. Lee, Y. T. Saito, H. Nakamura, D. Matsuda, Y. H. Takeyama, S. 2024-01-20T09:31:51Z 2024-01-20T09:31:51Z 2021-09-05 2014-07 0022-2313 https://pubs.kist.re.kr/handle/201004/126632 Linearly polarized photoluminescence (PL) measurements were made from InP-GaP lateral multiple quantum wells induced by composition modulation along the lateral direction. At B=0, two prominent emission peaks emerged, which are identified as transitions from In-rich well and Ga-rich barrier. regions. Both transitions are strongly linear polarized parallel to the [110] crystal direction. While rotating PL orientation from [110] to [1-10] direction, the well and barrier transitions show red- and blue-shifts, respectively, due to the different valence states. In high magnetic fields, the two peaks exhibit different diamagnetic energy shifts mainly because of the effective-mass difference in the In-rich and Ga-rich alternate regions along the lateral direction. (C) 2014 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MOLECULAR-BEAM EPITAXY COMPOSITION MODULATION SUPERLATTICES ALLOYS Optical anisotropy and diamagnetic energy shifts in InP-GaP lateral quantum wells Article 10.1016/j.jlumin.2014.02.036 1 JOURNAL OF LUMINESCENCE, v.151, pp.244 - 246 JOURNAL OF LUMINESCENCE 151 244 246 scie scopus 000336116300039 2-s2.0-84896976238 Optics Optics Article MOLECULAR-BEAM EPITAXY COMPOSITION MODULATION SUPERLATTICES ALLOYS Lateral composition modulation InP-GaP short period superlattice Optical anisotropy Diamagnetic energy shift