Sathyamoorthy, R. Abhirami, K. M. Gokul, B. Gautam, Sanjeev Chae, Keun Hwa Asokan, K. 2024-01-20T09:31:57Z 2024-01-20T09:31:57Z 2021-09-05 2014-07 1738-8090 https://pubs.kist.re.kr/handle/201004/126637 Present study demonstrates the feasibility of using oxides of Sn to fabricate the p-n junction diode and reports the device characteristics. Reactive thermal evaporation method was used to fabricate the p-type SnO and n-type SnO2 multilayer thin films. The x-ray diffraction (XRD) and Raman spectra depict the presence of both SnO and SnO2 layers. The interface of the p-n junction analyzed by cross-sectional transmission electron microscope (TEM) images and selected area electron diffraction (SAED) pattern confirmed the presence of SnO-SnO2 layers. The diode shows rectifying current-voltage characteristics with forward threshold voltage of 3.5 V. English KOREAN INST METALS MATERIALS TRANSPARENT CONDUCTING OXIDES TIN OXIDE ZNO EVAPORATION ELECTRODES SENSORS RAMAN SNO2 Fabrication of p-n Junction Diode Using SnO/SnO2 Thin Films and Its Device Characteristics Article 10.1007/s13391-013-3297-6 1 ELECTRONIC MATERIALS LETTERS, v.10, no.4, pp.743 - 747 ELECTRONIC MATERIALS LETTERS 10 4 743 747 scie scopus kci ART001897727 000339642600009 2-s2.0-84905406583 Materials Science, Multidisciplinary Materials Science Article TRANSPARENT CONDUCTING OXIDES TIN OXIDE ZNO EVAPORATION ELECTRODES SENSORS RAMAN SNO2 SnO/SnO2 diode raman analysis TEM thermal evaporation