Kim, SangHyeon Yokoyama, Masafumi Nakane, Ryosho Ichikawa, Osamu Osada, Takenori Hata, Masahiko Takenaka, Mitsuru Takagi, Shinichi 2024-01-20T09:32:39Z 2024-01-20T09:32:39Z 2021-09-05 2014-06-30 0003-6951 https://pubs.kist.re.kr/handle/201004/126673 We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (T-body) scaling provides better short channel effect (SCE) control, whereas the T-body scaling also causes the reduction of the mobility limited by channel thickness fluctuation (delta T-body) scattering (mu(fluctuation)). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (T-channel) scaling is more favorable than the thickness of MOS interface buffer layer (T-buffer) scaling from a viewpoint of a balance between SCEs control and mu(fluctuation) reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design. (C) 2014 AIP Publishing LLC. English AMER INST PHYSICS CHANNEL MOBILITY SI SCATTERING MOSFETS SILICON SOI S/D Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors Article 10.1063/1.4885765 1 APPLIED PHYSICS LETTERS, v.104, no.26 APPLIED PHYSICS LETTERS 104 26 scie scopus 000339114100066 2-s2.0-84905663729 Physics, Applied Physics Article CHANNEL MOBILITY SI SCATTERING MOSFETS SILICON SOI S/D