Lee, Young Tack Choi, Kyunghee Lee, Hee Sung Min, Sung-Wook Jeon, Pyo Jin Hwang, Do Kyung Choi, Hyoung Joon Im, Seongil 2024-01-20T09:32:44Z 2024-01-20T09:32:44Z 2021-09-04 2014-06 1613-6810 https://pubs.kist.re.kr/handle/201004/126678 Two MoS2 field-effect transistors are compared using graphene and Au/Ti source-drain contacts in respects of their Ohmic and OFF behavior on an identical MoS2 nanosheet. As a result, graphene-contact appears not only to show superior ohmic behavior to those of Au/Ti but also more enhanced OFF state behavior. Such results are attributed to the electric-field-induced work function tuning of exfoliated graphene. English Wiley - V C H Verlag GmbbH & Co. Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2 Nanosheet Transistor Channel Article 10.1002/smll.201303908 1 Small, v.10, no.12, pp.2356 - 2361 Small 10 12 2356 2361 N scie scopus 000337801200008 2-s2.0-84902826246 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article TRANSITION GAS FLAKES GATE FETs graphene source/drain contact nanosheet