Kim, Kwang-Chon Baek, Seung-Hyub Kim, Hyun Jae Hyun, Dow-Bin Kim, Seong Keun Kim, Jin-Sang 2024-01-20T09:34:05Z 2024-01-20T09:34:05Z 2021-09-05 2014-06 0361-5235 https://pubs.kist.re.kr/handle/201004/126745 The thermoelectric properties of I-doped Bi2Te3 films grown by metal-organic chemical vapor deposition have been studied. I-doped epitaxial (00l) Bi2Te3 films were successfully grown on 4A degrees tilted GaAs (001) substrates at 360 A degrees C. I concentration in the Bi2Te3 films was easily controlled by the variation in a flow rate of H-2 carrier gas for the delivery of an isopropyliodide precursor. As I ions in the as-grown Bi2Te3 films were not fully activated, they did not influence the carrier concentration and thermoelectric properties. However, a post-annealing process at 400 A degrees C activated I ions as a donor, accompanied with an increase in the carrier concentration. Interestingly, the I-doped Bi2Te3 films after the post-annealing process also exhibited enhancement of the Seebeck coefficient at the same electron concentration compared to un-doped Bi2Te3 films. Through doping I ions into Bi2Te3, the thermopower was also enhanced in Bi2Te3, and a high power factor of 5 x 10(-3) W K-2 m(-1) was achieved. English SPRINGER Thermopower Enhancement of Bi2Te3 Films by Doping I Ions Article 10.1007/s11664-013-2934-z 1 JOURNAL OF ELECTRONIC MATERIALS, v.43, no.6, pp.2000 - 2005 JOURNAL OF ELECTRONIC MATERIALS 43 6 2000 2005 scie scopus 000336372400079 2-s2.0-84901947320 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article MOCVD Bi2Te3 thermoelectric property iodine doping