Jeon, Woojin Rha, Sang Ho Lee, Woongkyu Yoo, Yeon Woo An, Cheol Hyun Jung, Kwang Hwan Kim, Seong Keun Hwang, Cheol Seong 2024-01-20T09:34:43Z 2024-01-20T09:34:43Z 2021-09-05 2014-05-28 1944-8244 https://pubs.kist.re.kr/handle/201004/126777 The role of Al dopant in rutile-phased TiO2 films in the evaluation of the mechanism of leakage current reduction in Al-doped TiO2 (ATO) was studied in detail. The leakage current of the ATO film was strongly affected by the Al concentration at the interface between the ATO film and the RuO2 electrode. The conduction band offset of the interface increased with the increase in the Al dopant concentration in the rutile TiO2, which reduced the leakage current in the voltage region pertinent to the next-generation dynamic random access memory application. However, the Al doping in the anatase TiO2 did not notably increase the conduction band offset even with a higher Al concentration. The detailed analyses of the leakage conduction mechanism based on the quantum mechanical transfer-matrix method showed that Schottky emission and Fowler-Nordheim tunneling was the dominant leakage conduction mechanism in the lower and higher voltage regions, respectively. The chemical analyses using X-ray photoelectron spectroscopy corroborated the electrical test results. English American Chemical Society INSULATOR-METAL CAPACITOR ATOMIC LAYER DEPOSITION DIELECTRIC-CONSTANT GROWTH-BEHAVIOR CURRENTS Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films Article 10.1021/am501247u 1 ACS Applied Materials & Interfaces, v.6, no.10, pp.7910 - 7917 ACS Applied Materials & Interfaces 6 10 7910 7917 scie scopus 000336639200113 2-s2.0-84901684311 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article INSULATOR-METAL CAPACITOR ATOMIC LAYER DEPOSITION DIELECTRIC-CONSTANT GROWTH-BEHAVIOR CURRENTS TiO2 Al-doped TiO2 leakage current Schottky emission conduction band offset oxygen vacancy