Kim, Gi-Hwan Walker, Bright Kim, Hak-Beom Kim, Jin Young Sargent, Edward H. Park, Jongnam Kim, Jin Young 2024-01-20T09:34:45Z 2024-01-20T09:34:45Z 2021-09-05 2014-05-28 0935-9648 https://pubs.kist.re.kr/handle/201004/126779 An inverted architecture of quantum dot solar cells is demonstrated by introducing a novel ZnO method on top of the PbS CQD film. Improvements in device characteristics stem from constructive optical interference from the ZnO layer that enhances absorption in the PbS CQD layer. Outstanding diode characteristics arising from a superior PbS/ZnO junction provide a further electronic advantage. English WILEY-V C H VERLAG GMBH THIN-FILMS PHOTOVOLTAICS EFFICIENCY NANOCRYSTALS PASSIVATION SOLIDS Inverted Colloidal Quantum Dot Solar Cells Article 10.1002/adma.201305583 1 ADVANCED MATERIALS, v.26, no.20, pp.3321 - + ADVANCED MATERIALS 26 20 3321 + scie scopus 000336999800021 2-s2.0-84901493118 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article THIN-FILMS PHOTOVOLTAICS EFFICIENCY NANOCRYSTALS PASSIVATION SOLIDS depleted heterojunction lead sulfide nanoparticles quantum dot solar cells zinc oxide