Choi, Min-Jung Park, Hyung-Ho Jeong, Doo Seok Kim, Jeong Hwan Kim, Jin-Sang Kim, Seong Keun 2024-01-20T09:34:51Z 2024-01-20T09:34:51Z 2021-09-05 2014-05-15 0169-4332 https://pubs.kist.re.kr/handle/201004/126784 HfO2 films were deposited by atomic layer deposition (ALD) using Hf[(C2H5)(CH3)N](4) and H2O2 at a temperature range of 175-325 degrees C. The growth per cycle of the HfO2 films decreased with increasing temperature up to 280 degrees C and then abruptly increased above 325 degrees C as a result of the thermal decomposition of the precursor. Although the HfO2 films grown with H2O2 exhibited slightly higher carbon contents than those grown with H2O, the leakage properties of the HfO2 films grown with H2O2 were superior to those of the HfO2 films grown with H2O. This is because the HfO2 films grown with H2O2 were fully oxidized as a result of the strong oxidation potential of H2O2. The use of the ALD process with H2O2 also revealed the conformal growth of HfO2 films on a SiO2 hole structure with an aspect ratio of similar to 15. This demonstrates that using the ALD process with H2O2 shows great promise for growing robust HfO2 films. (C) 2014 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV DOPED TIO2 FILMS OXIDES O-3 Atomic layer deposition of HfO2 thin films using H2O2 as oxidant Article 10.1016/j.apsusc.2014.02.098 1 APPLIED SURFACE SCIENCE, v.301, pp.451 - 455 APPLIED SURFACE SCIENCE 301 451 455 scie scopus 000335095600066 2-s2.0-84897914255 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article DOPED TIO2 FILMS OXIDES O-3 Atomic layer deposition HfO2 H2O2