Kang, Woonggi Jung, Minwoo Cha, Wonsuk Jang, Sukjae Yoon, Youngwoon Kim, Hyunjung Son, Hae Jung Lee, Doh-Kwon Kim, BongSoo Cho, Jeong Ho 2024-01-20T09:34:59Z 2024-01-20T09:34:59Z 2021-09-05 2014-05-14 1944-8244 https://pubs.kist.re.kr/handle/201004/126790 We characterized the electrical properties of a field-effect transistor (FET) and a nonvolatile memory device based on a solution-processable low bandgap small molecule, Si1TDPP-EE-C6. The small molecule consisted of electron-rich thiophene-dithienosilole-thiophene (Si1T) units and electron-deficient diketopyrrolopyrrole (DPP) units. The as-spun Si1TDPP-EE-C6 FET device exhibited ambipolar transport properties with a hole mobility of 7.3 X 10(-5) cm(2)/(V s) and an electron mobility of 1.6 X 10(-5) cm(2) /(V s). Thermal annealing at 110 degrees C led to a significant increase in carrier mobility, with hole and electron mobilities of 3.7 X 10(-3) and 5.1 X 10(-4) cm(2)/(Vs), respectively. This improvement is strongly correlated with the increased film crystallinity and reduced pi-pi intermolecular stacking distance upon thermal annealing, revealed by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) measurements. In addition, nonvolatile memory devices based on Si1TDPP-EE-C6 were successfully fabricated by incorporating Au nanoparticles (AuNPs) as charge trapping sites at the interface between the silicon oxide (SiO2) and cross-linked poly(4-vinylphenol) (cPVP) dielectrics. The device exhibited reliable nonvolatile memory characteristics, including a wide memory window of 98 V, a high on/off-current ratio of 1 X 10(3), and good electrical reliability. Overall, we demonstrate that donor-acceptor-type small molecules are a potentially important class of materials for ambipolar FETs and nonvolatile memory applications. English American Chemical Society FIELD-EFFECT TRANSISTORS THIN-FILM TRANSISTORS HIGH-PERFORMANCE MATERIALS DESIGN N-CHANNEL POLYMER ELECTRON HOLE SUBSTITUTION MOBILITIES High Crystalline Dithienosilole-Cored Small Molecule Semiconductor for Ambipolar Transistor and Nonvolatile Memory Article 10.1021/am500080p 1 ACS Applied Materials & Interfaces, v.6, no.9, pp.6589 - 6597 ACS Applied Materials & Interfaces 6 9 6589 6597 scie scopus 000336075300071 2-s2.0-84900869244 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article FIELD-EFFECT TRANSISTORS THIN-FILM TRANSISTORS HIGH-PERFORMANCE MATERIALS DESIGN N-CHANNEL POLYMER ELECTRON HOLE SUBSTITUTION MOBILITIES donor-acceptor-type small molecules ambipolar field effect transistor nonvolatile memory crystallinity hole mobility charge trapping