Choi, Won Young Chang, Joonyeon Lee, Jung Hoon Koo, Hyun Cheol 2024-01-20T09:35:04Z 2024-01-20T09:35:04Z 2021-09-05 2014-05-07 0021-8979 https://pubs.kist.re.kr/handle/201004/126794 Using the Shubnikov-de Haas oscillation measurement, the g-factor of carriers in a strong Rashba system is observed. To determine g-factor of carriers in the InAs quantum well channel with a strong Rashba effect, the magnetic fields are simultaneously applied along the in-plane direction and the perpendicular direction. The perpendicular field drives the oscillation of conductance for measuring Rashba spin orbit interaction and the in-plane field parallel to the Rashba field interacts with Rashba effect and modifies the intrinsic Rashba parameter. The total field inside the channel is a combination of the Rashba field and the in-plane field, so the modification of Rashba parameter gives a g-factor value of similar to 13 in our system. (C) 2014 AIP Publishing LLC. English AMER INST PHYSICS ELECTRON G-FACTOR HETEROSTRUCTURE Determination of g-factor in a quantum well channel with a strong Rashba effect Article 10.1063/1.4856035 1 JOURNAL OF APPLIED PHYSICS, v.115, no.17 JOURNAL OF APPLIED PHYSICS 115 17 scie scopus 000335643700336 2-s2.0-84893123894 Physics, Applied Physics Article; Proceedings Paper ELECTRON G-FACTOR HETEROSTRUCTURE g-factor Rashba effect quantum well channel