Shin, Jae Cheol Choi, Won Jun Choe, Jeong-Woo 2024-01-20T10:00:46Z 2024-01-20T10:00:46Z 2021-09-05 2014-05 0374-4884 https://pubs.kist.re.kr/handle/201004/126827 The optical and the structural properties of a 3-stacked In0.5Ga0.5As quantum dot (QD)/GaAs structure subjected to a post thermal annealing process have been investigated. Photoluminescence (PL) and time-resolved PL spectroscopy have been performed to examine the optical properties of the as-grown and thermally-treated QD structures. Thermal annealing of the QD structure at temperatures up to 700 A degrees C leads to enhancements of the PL intensity and the carrier decay time without any PL peak shifts. The increases in the PL intensity and the carrier lifetime can be attributed to a reduction in the number of crystal defects in the QDs and in the GaAs layer near the QDs. The structural properties of the In0.5Ga0.5As QDs/GaAs heterointerface have been further examined with a transmission electron microscope analysis. English KOREAN PHYSICAL SOC MOLECULAR-BEAM EPITAXY CARRIER LIFETIMES LAYER GROWTH WELL Effect of thermal treatment on the optical and the structural properties of In0.5Ga0.5As quantum dots Article 10.3938/jkps.64.1375 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.9, pp.1375 - 1379 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 64 9 1375 1379 scie scopus kci ART001875773 000336314000023 2-s2.0-84901266622 Physics, Multidisciplinary Physics Article MOLECULAR-BEAM EPITAXY CARRIER LIFETIMES LAYER GROWTH WELL InGaAs Quantum dot MBE III-V semiconductor Photoluminescence