Lee, Hak-Joo Cho, Jung-Min Kim, Inho Lee, Seung-Cheol Park, Jong-Keuk Baik, Young-Joon Lee, Wook-Seong 2024-01-20T10:00:57Z 2024-01-20T10:00:57Z 2021-09-05 2014-05 1612-8850 https://pubs.kist.re.kr/handle/201004/126837 The grain-refinement mechanisms involved during the deposition of diamond films by direct-current plasma assisted chemical vapor deposition (DC-PACVD) were investigated as a function of the inter-electrode electric field (IEEF). As IEEF was increased from 260 to 940Vcm(-1), the local electron temperatures near the growth front increased strongly; as a result, a strong grain refinement occurred ultimately yielding ultrananocrystalline diamond films (UNCD). Such observations were attributed to novel features of the DC-PACVD, including the electron-stimulated desorption (ESD) of the hydrogen-terminated moieties located at the surface, and the consequently enhanced generation of bi-radical sites at the growing diamond surface. English WILEY-V C H VERLAG GMBH An Insight into Grain Refinement Mechanism of Ultrananocrystalline Diamond Films Obtained by Direct Current Plasma-Assisted Chemical Vapor Deposition Article 10.1002/ppap.201300146 1 PLASMA PROCESSES AND POLYMERS, v.11, no.5, pp.437 - 447 PLASMA PROCESSES AND POLYMERS 11 5 437 447 N scie scopus 000335671200004 2-s2.0-84899899147 Physics, Applied Physics, Fluids & Plasmas Physics, Condensed Matter Polymer Science Physics Polymer Science Article ENERGY PRESSURE BIAS-ENHANCED NUCLEATION HOT-FILAMENT ION-BOMBARDMENT THIN-FILMS STRUCTURAL-PROPERTIES ELECTRON-EMISSION GROWTH SURFACE chemical vapor deposition (CVD) DC plasmas electron stimulated desorptions grain refinement ultrananocrystalline diamond films