Geum, Jongmin Jung, Eun Sik Kim, Yong Tae Kang, Ey Goo Sung, Man Young 2024-01-20T10:01:02Z 2024-01-20T10:01:02Z 2021-09-05 2014-05 1975-0102 https://pubs.kist.re.kr/handle/201004/126841 In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool. English SPRINGER SINGAPORE PTE LTD Enhancement of On-Resistance Characteristics Using Charge Balance Analysis Modulation in a Trench Filling Super Junction MOSFET Article 10.5370/JEET.2014.9.3.843 1 JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.9, no.3, pp.843 - 847 JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY 9 3 843 847 scie scopus kci ART001874518 000335379800010 2-s2.0-84899942479 Engineering, Electrical & Electronic Engineering Article Super junction MOSFET Trench filling Trench angle Charge balance