Kim, Sang-Hyeon Yokoyama, Masafumi Nakane, Ryosho Ichikawa, Osamu Osada, Takenori Hata, Masahiko Takenaka, Mitsuru Takagi, Shinichi 2024-01-20T10:01:28Z 2024-01-20T10:01:28Z 2021-08-31 2014-05 0018-9383 https://pubs.kist.re.kr/handle/201004/126864 We have investigated the effects of the tri-gate channel structure on electrical properties of extremely thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. It was found that the tri-gate structure provides significant improvement in short channel effect (SCE) control even in ETB-OI MOSFETs by the simulation. We have fabricated and demonstrated tri-gate InAsOI MOSFETs with fin width of the top surface down to 40 nm. The tri-gate ETB InAs-OI MOSFETs shows better SCEs control with small effective mobility (mu(eff)) reduction. Thus, we have demonstrated the operation of sub-20-nm-channel length (L-ch) InAs-OI MOSFETs. The 20-nm-L-ch InAs-OI MOSFETs show good electrostatic with subthreshold slope of 120 mV/decade and drain induced barrier lowering of 110 mV/V, and high transconductance (G(m)) of 1.64 mS/mu m. Furthermore, we have realized a wide-range threshold voltage (V-th) tunability in tri-gate InAs-OI MOSFETs through back bias voltage (V-B) control. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC FIELD-EFFECT TRANSISTORS ELECTRON MOBILITY S/D SI High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability Article 10.1109/TED.2014.2312546 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.5, pp.1354 - 1360 IEEE TRANSACTIONS ON ELECTRON DEVICES 61 5 1354 1360 scie scopus 000337753300020 2-s2.0-84899924195 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article FIELD-EFFECT TRANSISTORS ELECTRON MOBILITY S/D SI Body factor extremely thin-body (ETB) MOSFETs InGaAs MOSFETs metal source and drain (S/D) Ni-InGaAs S/D tri-gate V-th tenability