Kang, Min-Gyu Cho, Kwang-Hwan Nahm, Sahn Yoon, Seok-Jin Kang, Chong-Yun 2024-01-20T10:01:46Z 2024-01-20T10:01:46Z 2021-09-05 2014-04-15 1359-6462 https://pubs.kist.re.kr/handle/201004/126878 The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm(-2) and 0.62 mu A cm(-2) at 1 V, respectively. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD LEAKAGE CURRENT TEMPERATURE Effects of vanadium substitution on the electrical performance of amorphous SrBi2Ta2O9 thin-film capacitors Article 10.1016/j.scriptamat.2014.01.015 1 SCRIPTA MATERIALIA, v.77, pp.45 - 48 SCRIPTA MATERIALIA 77 45 48 scie scopus 000333717200012 2-s2.0-84896730296 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Science & Technology - Other Topics Materials Science Metallurgy & Metallurgical Engineering Article LEAKAGE CURRENT TEMPERATURE Thin-film capacitors SrBi2Ta2O9 Leakage current Amorphous Vanadium