Park, Se Jin Cho, Yunae Moon, Sung Hwan Kim, Ji Eun Lee, Doh-Kwon Gwak, Jihye Kim, Jihyun Kim, Dong-Wook Min, Byoung Koun 2024-01-20T10:02:01Z 2024-01-20T10:02:01Z 2021-09-05 2014-04-02 0022-3727 https://pubs.kist.re.kr/handle/201004/126890 Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu (InxGa1-x) S-2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu (InxGa1-x) (S1-ySey )(2) (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm(-2). The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films. English IOP PUBLISHING LTD ELECTRICAL-PROPERTIES TRANSPORT CUINSE2 OFFSET A comparative study of solution-processed low-and high-band-gap chalcopyrite thin-film solar cells Article 10.1088/0022-3727/47/13/135105 1 JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.47, no.13 JOURNAL OF PHYSICS D-APPLIED PHYSICS 47 13 scie scopus 000332791200006 2-s2.0-84896934004 Physics, Applied Physics Article ELECTRICAL-PROPERTIES TRANSPORT CUINSE2 OFFSET solar cell chalcopyrite solution-process