Park, M. H. Kim, H. S. Park, S. J. Song, J. D. Kim, S. H. Lee, Y. J. Choi, W. J. Park, J. H. 2024-01-20T10:02:42Z 2024-01-20T10:02:42Z 2021-09-05 2014-04 1533-4880 https://pubs.kist.re.kr/handle/201004/126926 InGaAs-capped InAs quantum dots (QDs) and InAs QDs were adopted for the study of the effects through growth temperature and the band structure of InAs QDs on the performance of GaAs-based QD solar cell. It has been shown that the defects due to low temperature growth resulted in the decrease of V-OC, J(SC) and external quantum efficiency for GaAs bulk solar cell and QD embedded solar cells. It has been also found that InAs QDs act as defects by trapping photo-generated carries which affect the carrier transport in QD solar cell. The QD solar cell with InGaAs-capped InAs QDs showed higher performance than the QD solar cell with only InAs QDs. Such result has been explained by photo-generated carrier trapping and tunneling through InGaAs OW state in InGaAs-apped InAs QDs. English AMER SCIENTIFIC PUBLISHERS IMPACT IONIZATION Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar Cell Article 10.1166/jnn.2014.8639 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.4, pp.2955 - 2959 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 14 4 2955 2959 scie scopus 000332226600037 2-s2.0-84897759729 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article IMPACT IONIZATION Solar Cell Quantum Dots InGaAs-Capped High Temperature Growth