Mun, Dae-Hwa Bae, Hyojung Bae, Sukang Lee, Hyunjung Ha, Jun-Seok Lee, Sanghyun 2024-01-20T10:02:48Z 2024-01-20T10:02:48Z 2021-09-05 2014-04 1862-6254 https://pubs.kist.re.kr/handle/201004/126931 GaN microstructures were grown on c-Al2O3 with a multi-stacked graphene buffered layer using metal metal-organic chemical-vapor deposition. Under the same growth conditions, the nucleation of GaN was suppressed by the low surface energy of graphene, resulting in a much lower density of microstructures relative to those grown on c-Al2O3. Residual stress in the GaN microstructures was estimated from the peak shift of the E-2 phonon using micro-Raman spectroscopy. The results showed that the compressive stress of approximately 0.36 GPa in GaN on c-Al2O3 caused by lattice mismatch and the difference in the thermal expansion coefficient was relaxed by introducing the graphene layer. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) English WILEY-V C H VERLAG GMBH RAMAN-SCATTERING FILMS LAYER Stress relaxation of GaN microstructures on a graphene-buffered Al2O3 substrate Article 10.1002/pssr.201400001 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.8, no.4, pp.341 - 344 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 8 4 341 344 scie scopus 000334173800004 2-s2.0-84898029390 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article RAMAN-SCATTERING FILMS LAYER GaN graphene residual stress Raman spectroscopy epitaxial lateral overgrowth