Oh, H. J. Park, S. J. Lim, J. Y. Cho, N. K. Song, J. D. Lee, W. Lee, Y. J. Myoung, J. M. Choi, W. J. 2024-01-20T10:03:04Z 2024-01-20T10:03:04Z 2021-09-05 2014-04 1533-4880 https://pubs.kist.re.kr/handle/201004/126945 Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MOW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MOW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties. English AMER SCIENTIFIC PUBLISHERS MOLECULAR-BEAM EPITAXY GROWTH SILICON GAAS SUPERLATTICES SEMICONDUCTORS ISLANDS Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer Article 10.1166/jnn.2014.8593 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.4, pp.2984 - 2989 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 14 4 2984 2989 scie scopus 000332226600042 2-s2.0-84897775646 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article MOLECULAR-BEAM EPITAXY GROWTH SILICON GAAS SUPERLATTICES SEMICONDUCTORS ISLANDS Molecular Beam Epitaxy Quantum Wells InAs Buffer Layer Silicon Substrate