Yoo, Tae-Hee Kwon, Seong-Ji Kim, Hak-Sung Hong, Jae-Min Lim, Jung Ah Song, Yong-Won 2024-01-20T10:03:34Z 2024-01-20T10:03:34Z 2021-09-04 2014-04 2046-2069 https://pubs.kist.re.kr/handle/201004/126972 This study demonstrates the efficient photo-annealing of a solution-processed metal oxide active layer in thin film transistors by using intensely pulsed white light (IPWL) irradiation. The IPWL process offers the advantages of room-temperature processing and high processing speed of the order of milliseconds under ambient conditions. Analysis of the chemical composition of the IPWL-annealed thin films indicates that the IPWL irradiation provides sufficient heat energy to convert the molecular precursors to the respective metal oxides. A solution-processed amorphous In-Ga-Zn-O transistor annealed by IPWL irradiation exhibited improved electrical performance with a field-effect mobility of 2.67 cm(2) V-1 s(-1) and I-on/I(of)f of 10(8). The suitability of IPWL for annealing other solution-processed metal oxide semiconductors was verified in IPWL-annealed Hf-In-Zn-O and In-Zn-O thin films. English ROYAL SOC CHEMISTRY ACTIVE CHANNEL LAYER Sub-second photo-annealing of solution-processed metal oxide thin-film transistors via irradiation of intensely pulsed white light Article 10.1039/c4ra01371a 1 RSC ADVANCES, v.4, no.37, pp.19375 - 19379 RSC ADVANCES 4 37 19375 19379 scie scopus 000335559100046 2-s2.0-84899863599 Chemistry, Multidisciplinary Chemistry Article ACTIVE CHANNEL LAYER intensely pulsed white light metal oxide thin-film transistor