Kim, SangHyeon Yokoyama, Masafumi Ikku, Yuki Nakane, Ryosho Ichikawa, Osamu Osada, Takenori Hata, Masahiko Takenaka, Mitsuru Takagi, Shinichi 2024-01-20T10:03:58Z 2024-01-20T10:03:58Z 2021-09-05 2014-03-17 0003-6951 https://pubs.kist.re.kr/handle/201004/126989 In this paper, we fabricated asymmetrically tensile-strained In0.53Ga0.47As-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a lateral strain relaxation technique. A stripe-like line structure, fabricated in biaxially strained In0.53Ga0.47As-OI can lead to the lateral strain relaxation and asymmetric strain configuration in In0.53Ga0.47As-OI with the channel width of 100 nm. We have found that the effective mobility (mu(eff)) enhancement in In0.53Ga0.47As-OI MOSFETs with uniaxial-like asymmetric strain becomes smaller than that in In0.53Ga0.47As-OI MOSFETs with biaxial strain. We have clarified from a systematic analysis between the strain values and the mu(eff) characteristics that this mobility behavior can be understood by the change of the energy level of the conduction band minimum due to the lateral strain relaxation. (C) 2014 AIP Publishing LLC. English AMER INST PHYSICS CHANNEL Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation Article 10.1063/1.4869221 1 APPLIED PHYSICS LETTERS, v.104, no.11 APPLIED PHYSICS LETTERS 104 11 scie scopus 000333252300080 2-s2.0-84897843522 Physics, Applied Physics Article CHANNEL