Kim, Hyun Soo Kim, Yong Tae Hwang, Ha Sub Sung, Man Young 2024-01-20T10:04:52Z 2024-01-20T10:04:52Z 2021-09-05 2014-03 1862-6254 https://pubs.kist.re.kr/handle/201004/127035 One of the candidate materials for phase-change memory, In3Sb1Te2 (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In3Sb1Te2 (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) English WILEY-V C H VERLAG GMBH The effect of carbon- doped In 3 Sb 1 Te 2 ternary alloys for multibit ( MLC) phase- change memory Article 10.1002/pssr.201308211 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.8, no.3, pp.243 - 247 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 8 3 243 247 scie scopus 000332928600007 2-s2.0-84896032014 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article phase-change memory carbon doping In3SbTe2 HRTEM transmission electron microscopy