Yoen, K. H. Lee, E. H. Kim, S. Y. Park, T. E. Bae, M. H. Song, J. D. 2024-01-20T10:04:58Z 2024-01-20T10:04:58Z 2021-09-05 2014-03 1567-1739 https://pubs.kist.re.kr/handle/201004/127041 Full zinc-blende structure GaAs nanowire grown by a catalyst-free method is reported with As pulse injection in the initial growth time. When As is injected by a pulse while maintaining Ga injection, high Ga supersaturation could easily form nanowire nucleation for the seed formation. Then, continuous GaAs injection contributes to GaAs nanowire growth for increasing length. The GaAs nanowire could grow further with 3.7-mu m length and 120-nm diameter. GaAs nanowires were measured by transmission electron microscopy analysis. (C) 2013 Elsevier B.V. All rights reserved. English ELSEVIER ZINC BLENDE MECHANISM WURTZITE Growth of catalyst-free GaAs nanowire with As pulse injection for full zinc-blende structure Article 10.1016/j.cap.2013.11.030 1 CURRENT APPLIED PHYSICS, v.14, no.3, pp.366 - 370 CURRENT APPLIED PHYSICS 14 3 366 370 scie scopus kci ART001867962 000331640600027 2-s2.0-84892746086 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article ZINC BLENDE MECHANISM WURTZITE Nanostructures Crystal growth Epitaxial growth Transmission electron microscopy (TEM) Crystal structure Catalytic properties