Kim, Kyung-Ho Koo, Hyun Cheol Chang, Joonyeon Yang, Yun-Suk Kim, Hyung-jun 2024-01-20T10:30:38Z 2024-01-20T10:30:38Z 2021-09-04 2014-03 0018-9464 https://pubs.kist.re.kr/handle/201004/127068 Rashba spin-orbit interaction (SOI) in double-sided-doped InAs quantum well (QW) structures has been investigated by means of Shubnikov-de Haas oscillation and potentiometric measurements. Different doping density in two separate carrier supply layers induces the asymmetric potential gradient of the InAs QW and larger charge concentration on the side of a more heavily doped carrier supply layer. The Rashba SOI parameter (alpha) drastically increases from similar to 3.5 x 10(-12) to similar to 6.9 x 10(-12) eV-m as a gate electric field (V-g) decreases from 5 to -10 V. On the other hand, different distances between a ferromagnet and the InAs QW effectuate one order of magnitude difference in junction resistance area (RA). This experimental result distinctly reveals the junction RA between a ferromagnet and a semiconductor QW is a crucial factor to obtain a hysteresis loop-like potentiometric signal. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC GATE CONTROL Shubnikov-de Haas Oscillation and Potentiometric Methods for Spin-Orbit Interaction Parameter Measurement in an InAs Quantum Well Article 10.1109/TMAG.2013.2283850 1 IEEE TRANSACTIONS ON MAGNETICS, v.50, no.3 IEEE TRANSACTIONS ON MAGNETICS 50 3 scie scopus 000333747000003 2-s2.0-84897091913 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article GATE CONTROL Gate voltage dependence InAs quantum well (QW) potentiometry spin-orbit interaction (SOI)