Kim, Jeong Hwan Park, Tae Joo Kim, Seong Keun Cho, Deok-Yong Jung, Hyung-Suk Lee, Sang Young Hwang, Cheol Seong 2024-01-20T10:31:00Z 2024-01-20T10:31:00Z 2021-09-05 2014-02-15 0169-4332 https://pubs.kist.re.kr/handle/201004/127084 The properties of atomic layer deposited (ALD) HfO2 films grown at low temperatures (<= 100 degrees C) were examined for potential applications in flexible display and bioelectronics. A saturated ALD growth behavior was observed even at an extremely low temperature (30 degrees C) due to the strong oxidizing potential of O-3. However, HfO2 films grown at low temperatures showed a low film density and high impurity concentration, because the thermal energy during film growth was insufficient to remove ligands completely from Hf ions in precursor molecule. This resulted in low dielectric constant and high leakage current density of the films. Nevertheless, HfO2 film grown at 100 degrees C using O-3 gas with a high concentration (390 g/Nm(3)) showed a tolerable impurity concentration with the dielectric constant of 16 and breakdown field of similar to 4 MV/cm, which are approximately two-thirds of those of HfO2 film grown at 250 degrees C. C) 2013 Elsevier B.V. All rights reserved. English ELSEVIER OXIDANT METAL SI INTERFACE DEFECTS ALD XPS Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (<= 100 degrees C) using O-3 as an oxygen source Article 10.1016/j.apsusc.2013.12.061 1 APPLIED SURFACE SCIENCE, v.292, pp.852 - 856 APPLIED SURFACE SCIENCE 292 852 856 scie scopus 000330208500118 2-s2.0-84893644368 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article OXIDANT METAL SI INTERFACE DEFECTS ALD XPS Atomic layer deposition HfO2 Ozone concentration Low temperature process