Lee, Ki-Young Kim, Ilsoo Kim, So-Eun Jeong, Du-Won Kim, Ju-Jin Rhim, Hyewhon Ahn, Jae-Pyeong Park, Seung-Han Choi, Heon-Jin 2024-01-20T10:31:32Z 2024-01-20T10:31:32Z 2021-09-04 2014-02-03 1931-7573 https://pubs.kist.re.kr/handle/201004/127111 The single living cell action potential was measured in an intracellular mode by using a vertical nanoelectrode. For intracellular interfacing, Si nanowires were vertically grown in a controlled manner, and optimum conditions, such as diameter, length, and nanowire density, were determined by culturing cells on the nanowires. Vertical nanowire probes were then fabricated with a complimentary metal-oxide-semiconductor (CMOS) process including sequential deposition of the passivation and electrode layers on the nanowires, and a subsequent partial etching process. The fabricated nanowire probes had an approximately 60-nm diameter and were intracellular. These probes interfaced with a GH(3) cell and measured the spontaneous action potential. It successfully measured the action potential, which rapidly reached a steady state with average peak amplitude of approximately 10 mV, duration of approximately 140 ms, and period of 0.9 Hz. English SPRINGEROPEN FIELD-EFFECT TRANSISTORS CONTROLLED GROWTH SILICON CHIP NERVE-CELLS NEURONS ARRAYS DEVICE NETWORKS Vertical nanowire probes for intracellular signaling of living cells Article 10.1186/1556-276X-9-56 1 NANOSCALE RESEARCH LETTERS, v.9 NANOSCALE RESEARCH LETTERS 9 scie scopus 000331634100001 2-s2.0-84897750896 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article FIELD-EFFECT TRANSISTORS CONTROLLED GROWTH SILICON CHIP NERVE-CELLS NEURONS ARRAYS DEVICE NETWORKS Silicon nanowire Intracellular interfacing Living cell Nanowire probe Action potential