Chang, Seo Hyoung Kim, Jungho Phatak, Charudatta D'Aquila, Kenneth Kim, Seong Keun Kim, Jiyoon Song, Seul Ji Hwang, Cheol Seong Eastman, Jeffrey A. Freeland, John W. Hong, Seungbum 2024-01-20T10:31:58Z 2024-01-20T10:31:58Z 2021-09-05 2014-02 1936-0851 https://pubs.kist.re.kr/handle/201004/127134 The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. However, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. We found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. Understanding X-ray-controlled reversible resistance changes can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices. English AMER CHEMICAL SOC MEMRISTIVE DEVICES X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells Article 10.1021/nn405867p 1 ACS NANO, v.8, no.2, pp.1584 - 1589 ACS NANO 8 2 1584 1589 scie scopus 000332059200054 2-s2.0-84894630635 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article MEMRISTIVE DEVICES resistive switching X-ray irradiation photovoltaic effect Magneli phase Joule heating defect generation