Oh, Hyun Gon Jeong, Cherlhyun Cho, Il Hwan 2024-01-20T10:32:03Z 2024-01-20T10:32:03Z 2021-09-05 2014-02 0021-4922 https://pubs.kist.re.kr/handle/201004/127138 The self-heating effects (SHEs) of saddle metal oxide semiconductor field-effect transistors (MOSFETs) and gate dimensional impacts on thermal characteristics have been investigated on the basis of a realistic thermal conductivity of silicon and other materials. Thermal characteristics were analyzed by thermal resistance of Si channel. Since Si material has larger thermal conductivity than that of silicon dioxide, it is shown that the length of the side gate of saddle MOSFETs determines heat dissipation of Si channel. Side gate of saddle MOSFETs can be one of the important parameter in device optimization. (C) 2014 The Japan Society of Applied Physics English IOP PUBLISHING LTD Thermal analysis of self-heating in saddle MOSFET devices Article 10.7567/JJAP.53.020303 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.2 JAPANESE JOURNAL OF APPLIED PHYSICS 53 2 scie scopus 000332593200003 2-s2.0-84893231773 Physics, Applied Physics Article MOSFET self-heating effects Simulation saddle structure