Lee, Sanghyun Smith, D. Barton Xu, Jun 2024-01-20T10:32:14Z 2024-01-20T10:32:14Z 2021-09-05 2014-02 0374-4884 https://pubs.kist.re.kr/handle/201004/127148 p-type ZnTe films were grown on a sputtered ZnO layer by using pulsed laser deposition in a nitrogen atmosphere. As the growth temperature was increased from 220 to 320 A degrees C, hole concentrations in the ZnTe films decreased significantly from 1.3 x 10(18) to 1.4 x 10(16) cm(-3) while the hole mobility increased slightly. The film growth at higher temperatures resulted in the loss of p-type behavior in the ZnTe films and on a deterioration in the film's crystallinity. The degradation of crystal quality and p-type characteristics of ZnTe are most likely due to instable nitrogen bonding in ZnTe at high temperatures and to the large lattice mismatch of similar to 25% between the ZnTe (111) and the ZnO (0001) crystal planes. English KOREAN PHYSICAL SOC MOLECULAR-BEAM EPITAXY NITROGEN DIODES CDTE Characteristics of p-type ZnTe films grown on sputtered ZnO by using pulsed laser deposition Article 10.3938/jkps.64.461 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.3, pp.461 - 464 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 64 3 461 464 scie scopus kci 000332451500022 2-s2.0-84894728298 Physics, Multidisciplinary Physics Article MOLECULAR-BEAM EPITAXY NITROGEN DIODES CDTE p-type zinc telluride (ZnTe) Zinc oxide (ZnO) Heterostructure Pulsed laser deposition (PLD)