Kim, Sun Jin We, Ju Hyung Kim, Jin Sang Kim, Gyung Soo Cho, Byung Jin 2024-01-20T10:33:54Z 2024-01-20T10:33:54Z 2021-09-05 2014-01-05 0925-8388 https://pubs.kist.re.kr/handle/201004/127231 We herein report the thermoelectric properties of Sb2Te3 thick film fabricated by a screen-printing technique and a subsequent annealing process. Each step of the screen-printing fabrication process of Sb2Te3 thick film is described in detail. It was found that the subsequent annealing process must be carefully designed to achieve good thermoelectric properties of the screen-printed film. The results show that the annealing of the screen-printed Sb2Te3 thick film together with tellurium powder in the same process chamber significantly improves the carrier mobility by increasing the average scattering time of the carrier in the film, resulting in a large improvement of the power factor. By optimizing the annealing process, we achieved a maximum thermoelectric figure-of-merit, ZT, of 0.32 at room temperature, which is slightly higher than that of bulk Sb2Te3. Because screen-printing is a simple and low-cost process and given that it is easy to scale up to large sizes, this result will be useful for the realization of large, film-type thermoelectric devices. (c) 2013 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA TELLURIDE Thermoelectric properties of P-type Sb2Te3 thick film processed by a screen-printing technique and a subsequent annealing process Article 10.1016/j.jallcom.2013.07.195 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.582, pp.177 - 180 JOURNAL OF ALLOYS AND COMPOUNDS 582 177 180 scie scopus 000325468100030 2-s2.0-84883200883 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article TELLURIDE Sb2Te3 thick film Screen-printing technique Low-cost Subsequent annealing