Lee, Tae Young Koo, Hyun Cheol Kim, Hyung-Jun Han, Suk Hee Chang, Joonyeon 2024-01-20T10:34:40Z 2024-01-20T10:34:40Z 2021-09-05 2014-01 0018-9464 https://pubs.kist.re.kr/handle/201004/127269 The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 m Omega, is observed and the spin Hall angle is found to be similar to 0.01. The dominant mechanism is believed to side-jump scattering. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Electrical Detection of the Spin Hall Effects in InAs Quantum Well Structure with Perpendicular Magnetization of [Pd/CoFe] Multilayer Article 10.1109/TMAG.2013.2278175 1 IEEE TRANSACTIONS ON MAGNETICS, v.50, no.1 IEEE TRANSACTIONS ON MAGNETICS 50 1 scie scopus 000330026800025 2-s2.0-84904356989 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article Spin Hall effect (SHE) spin polarized transport spintronics quantum well (QW)