Chu, Van Ben Cho, Jin Woo Park, Se Jin Park, Hoo Keun Do, Young Rag Min, Byoung Koun 2024-01-20T10:34:46Z 2024-01-20T10:34:46Z 2021-09-05 2014-01 0922-6168 https://pubs.kist.re.kr/handle/201004/127274 We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuInxGa1-xS2 (CIGS) thin-film solar cells. ITO nanorod films similar to 700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS-ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e. g. CdS) between the CIGS and ITO. English SPRINGER LOW-COST Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells Article 10.1007/s11164-013-1454-z 1 RESEARCH ON CHEMICAL INTERMEDIATES, v.40, no.1, pp.49 - 56 RESEARCH ON CHEMICAL INTERMEDIATES 40 1 49 56 scie scopus 000329795500007 2-s2.0-84892834116 Chemistry, Multidisciplinary Chemistry Article; Proceedings Paper LOW-COST Gap filling ITO nanorods CIGS Superstrate-type Solar cells