Park, Byoungnam Ko, Doo-Hyun 2024-01-20T10:34:48Z 2024-01-20T10:34:48Z 2021-09-05 2014-01 1932-7447 https://pubs.kist.re.kr/handle/201004/127276 Spectral trap density of states (DOS) and intrinsic mobilities in pristine and sonicated P3HT films were calculated and compared using temperature-dependent field-effect charge transport measurements. With sonication of P3HT solution, the field effect transistor (FET) hole mobility in its film state was improved remarkably in comparison with that in a pristinepoly(3-hexylthiophene) (P3HT) film. Spectral trap DOS were calculated through gate voltage-dependent activation energy measurements using the bottom-contact field effect transistors (FETs). For the pristine-P3HT films, the width of the shallow trap DOS was increased, indicating increased disorder in comparison with that for the sonicated-P3HT films. Further, the intrinsic mobility, 0.155 cm(2)/(V s), in the sonicated-P3HT film was far larger than that, 0.018 cm(2)/(V s), in the pristine one, suggesting that the structural properties of the P3HT films in the ordered region close to the gate dielectric are different. This reveals that a higher mobility in the sonicated-P3HT film originates from more efficient hole transport in the ordered P3HT region as well as less trap densities in the disordered region. English American Chemical Society Charge Transport in Ordered and Disordered Regions in Pristine and Sonicated-Poly(3-hexylthiophene) Films Article 10.1021/jp4116047 1 The Journal of Physical Chemistry C, v.118, no.3, pp.1746 - 1752 The Journal of Physical Chemistry C 118 3 1746 1752 N scie scopus 000330252600039 2-s2.0-84893081754 Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article HETEROJUNCTION SOLAR-CELLS FIELD-EFFECT TRANSISTORS LIGHT-EMITTING-DIODES REGIOREGULAR POLY(3-HEXYLTHIOPHENE) CONJUGATED POLYMERS PHOTOVOLTAIC DEVICES ACCUMULATION LAYER MOLECULAR-WEIGHT EFFECT MOBILITY PERFORMANCE