Son, Dong Ick Kim, Hong Hee Hwang, Do Kyung Kwon, Soonnam Choi, Won Kook 2024-01-20T11:00:26Z 2024-01-20T11:00:26Z 2021-09-04 2014-01 2050-7526 https://pubs.kist.re.kr/handle/201004/127300 Inverted quantum dot based light-emitting diodes (QDLED) were simply fabricated by an all solution processing. Polyethylenimine ethoxylated (PEIE) was used as a surface modifier in the device, to reduce the indium tin oxide (ITO) electrode work function below 3.08 eV. Based on transmission electron microscopy (TEM) results, CdSe–ZnS QDs with an 8 nm size were uniformly distributed to form a monolayer on a PEIE/ITO glass substrate. In this inverted QDLED, hybrid polymers [poly(N-vinylcarbazole) + poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine were adopted as a hole transporting layer (HTL) to enhance the hole transport property. At a low-operating voltage of 3 V, the device was turned on and emitted a spectrally red color light with a maximum luminance of 2900 cd m−2 and a current efficacy of 0.35 cd A−1. English Royal Society of Chemistry Inverted CdSe-ZnS quantum dots light-emitting diode using low-work function organic material polyethylenimine ethoxylated Article 10.1039/c3tc31297f 1 Journal of Materials Chemistry C, v.2, no.3, pp.510 - 514 Journal of Materials Chemistry C 2 3 510 514 N scie scopus 000329068900012 2-s2.0-84890344992 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article ELECTROLUMINESCENCE BRIGHT NANOCRYSTALS DEVICE CdSe-ZnS quantum dots LED Inverted LED low work function polymer PEIE