Park, Se Jin Cho, Jin Woo Lee, Joong Kee Shin, Keeshik Kim, Ji-Hyun Min, Byoung Koun 2024-01-20T11:00:32Z 2024-01-20T11:00:32Z 2021-09-04 2014-01 1062-7995 https://pubs.kist.re.kr/handle/201004/127305 A high band-gap (similar to 1.55eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (similar to 787mV) with a power conversion efficiency of 8.28% under standard irradiation conditions. Copyright (c) 2013 John Wiley & Sons, Ltd. English WILEY LOW-COST Solution processed high band-gap CuInGaS2 thin film for solar cell applications Article 10.1002/pip.2354 1 PROGRESS IN PHOTOVOLTAICS, v.22, no.1, pp.122 - 128 PROGRESS IN PHOTOVOLTAICS 22 1 122 128 scie scopus 000328248500016 2-s2.0-84890548303 Energy & Fuels Materials Science, Multidisciplinary Physics, Applied Energy & Fuels Materials Science Physics Article LOW-COST high band-gap CIGS CuInxGa1-xS2 solution process solar cells