Kim, Eunkyeom Moon, Sun-Woo Park, Won-Woong Han, Seung-Hee 2024-01-20T11:01:20Z 2024-01-20T11:01:20Z 2021-09-05 2013-12-02 0040-6090 https://pubs.kist.re.kr/handle/201004/127344 Growth of low-temperature metal-free crystallized Ge film was investigated using inductively coupled plasma-assisted DC magnetron sputtering. The films were deposited both without and with inductively coupled plasma. The films deposited by a conventional DC magnetron sputtering system had randomly oriented crystalline structures. However, the addition of inductively coupled plasma developed crystal phase from an amorphous to a preferred oriented crystalline with increasing sputtering power. The optical band gaps of the amorphous and crystalline phases were 0.96 eV and 0.7 eV, respectively. (C) 2013 Elsevier B. V. All rights reserved. English ELSEVIER SCIENCE SA THIN-FILM DEPOSITION GLASS Growth of preferred orientation Ge film using inductively coupled plasma-assisted DC magnetron sputtering at low temperature Article 10.1016/j.tsf.2013.09.071 1 THIN SOLID FILMS, v.548, pp.186 - 189 THIN SOLID FILMS 548 186 189 scie scopus 000327530300029 2-s2.0-84887494747 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article THIN-FILM DEPOSITION GLASS DC sputtering ICP-assisted DC sputtering Ge thin film Crystalline film growth