Lee, Ik-Jae Sung, Nark-Eon Chae, Keun Hwa Conley, Ray 2024-01-20T11:01:26Z 2024-01-20T11:01:26Z 2022-01-25 2013-12 0040-6090 https://pubs.kist.re.kr/handle/201004/127350 Zinc-tin-oxide (ZTO) thin films were grown by radio frequency magnetron sputtering on glass substrates at various substrate temperatures. The effects of substrate temperature on the crystalline behavior and electrical and optical properties of the films were studied. The ZTO films were amorphous and maintained their stable amorphous state up to a substrate temperature of 350 degrees C. With increasing substrate temperature, the ZTO films underwent an amorphous-to-crystalline phase transition. The Hall mobility of the films was in the range of 22.7-23.5 cm(2)/V s in the amorphous phase and 15.4-19.6 cm(2)/V s in the crystalline phase. The carrier concentration reached 8.287 x 10(19) cm(-3), resulting in a minimum resistivity of 8.75 x 10(-3) Omega.cm in the film deposited at 750 degrees C. The average transmittance in the visible region was >= 85%, and the band gap showed a red-shift in the amorphous phase and a blue-shift in the crystalline phase. (C) 2013 Elsevier B. V. All rights reserved. English ELSEVIER SCIENCE SA Characterization of zinc-tin-oxide films deposited by radio frequency magnetron sputtering at various substrate temperatures Article 10.1016/j.tsf.2013.08.067 1 THIN SOLID FILMS, v.548, pp.385 - 388 THIN SOLID FILMS 548 385 388 N scie scopus 000327530300062 2-s2.0-84887438085 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article SENSITIZED SOLAR-CELLS THIN-FILMS OPTICAL-PROPERTIES ELECTRONIC-STRUCTURE TRANSPARENT STANNATE TRANSISTORS ZN2SNO4 ZNO SEMICONDUCTORS Zinc-tin-oxide Sputtering X-ray diffraction Transmission electron microscopy Band gap Hall mobility