Diware, Mangesh S. Kim, Tae Jung Yoon, Jae Jin Barange, Nilesh S. Byun, Jun Seok Park, Han Gyeol Kim, Young Dong Shin, Sang Hoon Song, Jin Dong 2024-01-20T11:03:28Z 2024-01-20T11:03:28Z 2021-09-05 2013-11-01 0040-6090 https://pubs.kist.re.kr/handle/201004/127453 By determining the parameters of the parametric model (PM) for selected Al compositions x of In-1 (-) xAlxSb, we provide the information needed to accurately calculate the room-temperature dielectric functions epsilon = epsilon(1) + i epsilon(2) of these alloys from 1.5 to 6.0 eV as a continuous function of x over the entire composition range 0 <= x <= 1. Our parameters are determined from data obtained by spectroscopic ellipsometry for Al compositions x = 0.00, 0.142, 0.341, 0.539, 0.754, and 1.00. The PM dielectric functions are found to be in excellent agreement with the data. These results will be useful in many aspects of research and technology. (c) 2013 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA ELECTRON-MOBILITY TRANSISTORS V COMPOUND SEMICONDUCTORS FILMS INAS GAAS INSB INP GE SI Dielectric functions of In-1 (-) xAlxSb alloys for arbitrary compositions with parametric modeling Article 10.1016/j.tsf.2013.04.075 1 THIN SOLID FILMS, v.546, pp.26 - 30 THIN SOLID FILMS 546 26 30 scie scopus 000325092000007 2-s2.0-84885319233 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper ELECTRON-MOBILITY TRANSISTORS V COMPOUND SEMICONDUCTORS FILMS INAS GAAS INSB INP GE SI Ellipsometry In-1 (-) xAlxSb Dielectric function Parametric model