Ko, Ji-Sun Park, Jong-Keuk Lee, Wook-Seong Huh, Joo-Youl Baik, Young-Joon 2024-01-20T11:04:03Z 2024-01-20T11:04:03Z 2021-09-05 2013-11 1598-9623 https://pubs.kist.re.kr/handle/201004/127482 Cubic boron nitride (c-BN) films were deposited by an unbalanced magnetron sputtering method. A (100) Si wafer with a nanocrystalline diamond thin film as a surface coating layer or that without it was used as a substrate. The target power was varied from 100 to 400 W. A boron nitride target was used, which was connected to a radio frequency power supply. High frequency power connected to a substrate holder was used for self-biasing. The deposition pressure was 0.27 MPa with a flow of Ar (18 sccm) - N-2 (2 sccm) mixed gas. The existence of threshold bias voltages for c-BN formation and resputtering were observed irrespective of target power. The bias voltage window for c-BN formation broadened with increased target power. The deposition rate decreased with enhanced bias voltage and decreased target power. Residual stresses of the films did not vary noticeably with target power within the target power range of c-BN formation. A parameter space for c-BN formation according to the target power and the bias voltage, as two variables, was suggested. English KOREAN INST METALS MATERIALS ION-BOMBARDMENT GROWTH NUCLEATION STRESS Effect of radio-frequency electric power applied to a boron nitride unbalanced magnetron sputter target on the deposition of cubic boron nitride thin film Article 10.1007/s12540-013-6028-5 1 METALS AND MATERIALS INTERNATIONAL, v.19, no.6, pp.1317 - 1321 METALS AND MATERIALS INTERNATIONAL 19 6 1317 1321 scie scopus kci ART001818765 000327080600022 2-s2.0-84888413207 Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Materials Science Metallurgy & Metallurgical Engineering Article ION-BOMBARDMENT GROWTH NUCLEATION STRESS cubic boron nitride sputtering residual stress crystal structure Fourier transformed infrared spectroscopy