Lee, Eun-Sook Park, Jong-Keuk Lee, Wook-Seong Seong, Tae-Yeon Baik, Young-Joon 2024-01-20T11:04:25Z 2024-01-20T11:04:25Z 2021-09-05 2013-11 1598-9623 https://pubs.kist.re.kr/handle/201004/127502 Cubic boron nitride (c-BN) films were deposited by the unbalanced magnetron sputtering method. A Si substrates coated with a nanocrystalline diamond (NCD) was used as a substrate. The deposition temperature was varied systematically from room temperature to 800 A degrees C. A boron nitride target was used which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing. The c-BN phase forms for all samples, irrespective of the deposition temperature, with a little amount of hexagonal phase existing as an intrinsic turbostratic boron nitride (t-BN) layer, whose thickness decreased with increasing temperature. The residual stress was maintained at a nearly constant compressive value. The adhesion improved markedly at high deposition temperature, but the insertion of the NCD buffer layer was ineffective in inhibiting the formation of t-BN layer under the present deposition condition. English KOREAN INST METALS MATERIALS BEAM-ASSISTED DEPOSITION STRESS GROWTH Effect of deposition temperature on cubic boron nitride thin film deposited by unbalanced magnetron sputtering method with a nanocrystalline diamond buffer layer Article 10.1007/s12540-013-6029-4 1 METALS AND MATERIALS INTERNATIONAL, v.19, no.6, pp.1323 - 1326 METALS AND MATERIALS INTERNATIONAL 19 6 1323 1326 scie scopus kci ART001818766 000327080600023 2-s2.0-84888392575 Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Materials Science Metallurgy & Metallurgical Engineering Article BEAM-ASSISTED DEPOSITION STRESS GROWTH cubic boron nitride (c-BN) sputtering microstructure residual stress transmission electron microscopy