Baral, Ashok Kumar Dasari, Hari Prasad Kim, Byung-Kook Lee, Jong-Ho 2024-01-20T11:05:01Z 2024-01-20T11:05:01Z 2021-09-05 2013-10-25 0925-8388 https://pubs.kist.re.kr/handle/201004/127532 Electrical and dielectric properties of the nanocrystalline GDC materials co-doped with CoO (by deposition precipitation method) were studied in the temperature range of 150-600 degrees C. CoO co-doped samples show higher grain interior conductivity than that of GDC. Dielectric loss tangent (tan delta) shows the presence of defect associates such as (Co - V-<(o)double over dot> - Co) and (Co - V-<(o)double over dot>) in co-doped samples in addition to the defects (Gd - V-<(o)double over dot> - Gd) and (Gd - V-<(o)double over dot>) that are present in GDC system. Dynamic parameters such as migration energy and association energy of oxygen vacancies do not vary significantly with co-doping CoO in the GDC materials. With higher content of CoO, excess of Co2+ in the grain boundary regions leads to trapping of vacancies and/or depletion of vacancies in the space charge region. Therefore grain boundary activation energy increases and grain boundary conductivity decreases with CoO content above 1 mol%, at lower temperatures. In the temperature range of 150-600 degrees C overall conductivities in CoO co-doped samples increase two to three times than that of GDC material. (C) 2013 Elsevier B. V. All rights reserved. English ELSEVIER SCIENCE SA ELECTRICAL-CONDUCTIVITY SINTERABILITY RELAXATION SM Effect of sintering aid (CoO) on transport properties of nanocrystalline Gd doped ceria (GDC) materials prepared by co-precipitation method Article 10.1016/j.jallcom.2013.05.191 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.575, pp.455 - 460 JOURNAL OF ALLOYS AND COMPOUNDS 575 455 460 scie scopus 000321751000070 2-s2.0-84880184560 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article ELECTRICAL-CONDUCTIVITY SINTERABILITY RELAXATION SM Ionic conductivity Dielectric loss tangent Defect pairs Association energy Migration energy Grain boundary conductivity